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 BULB49DT4
High voltage fast-switching NPN power transistor
General features

High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed High ruggedness Surface mounting TO-263 (D2PAK) power package In compliance with the 2002/93/EC European Directive
1
TO-263 D2PAK
3
Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. The device is designed for use in electronic transformer for halogen lamps.
Internal schematic diagrams
Applications

Electronic transformers for halogen lamps Flyback and forward single transistor low power converters
Order codes
Part Number BULB49DT4 Marking BULB49D Package D 2PAK Packing Tape & reel
July 2006
Rev 2
1/11
www.st.com 11
BULB49DT4
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
BULB49DT4
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ
Absolute maximum ratings
Parameter Collector-emitter voltage (V BE =0) Collector-emitter voltage (IB =0) Emitter-base voltage (IC =0, IB <2A, tP < 10ms) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c 25C Storage temperature Max. operating junction temperature Value 850 450 V(BR)EBO 5 10 2 4 80 -65 to 150 150 Unit V V V A A A A W C C
Table 2.
Symbol Rthj-case Rthj-amb
Thermal data
Parameter Thermal resistance junction-case Thermal resistance junction-ambient __max __max Value 1.56 62.5 Unit C/W C/W
3/11
Electrical characteristics
BULB49DT4
2
Electrical characteristics
(Tcase = 25C unless otherwise specified) Table 3.
Symbol ICES IEBO V(BR)EBO
Electrical characteristics
Parameter Collector cut-off current (VBE =0) Emitter cut-off current (IC =0) Emitter-base brakdown voltage (IC = 0) Test Conditions VCE = 850V VCE = 850V VEB = 9V IE =10mA 10 450 _ _ IB =0.2A _ _ IB =0.4A __ _ IB =0.8A _ _ IB =0.2A _ _ IB =0.8A V CE =5V V CE =5V VCE =10V VBB= -2.5V R BB =0 IC =2A 2 3 0.8 s s (see figure 11) IC =4A RBB(off) =0 L =1mH 0.5 50 1.3 100 1.5 s ns V 450 V 4 10 60 10 0.1 0.3 0.6 1.2 1 1.3 Tj = 125C Min. Typ. Max. 100 500 100 18 Unit A A A V V V V V V V
Collector-emitter VCEO(sus)(1) sustaining voltage (I = 0) IC =10mA B VCE(sat) (1) Collector-emitter saturation voltage Base-emitter saturation voltage IC =1A IC =2A IC =4A IC =1A IC =4A IC =10mA hFE
(1)
VBE(sat) (1)
DC current gain
IC =500mA IC =7A IC =8A L =50H tp =10s VCC =250V
VCEW
(1)
Maximum collectoremitter voltage without snubber Resistive load Storage time Fall time Inductive load Storage time Fall time Diode forward voltage
ts tf
IB1=-IB2 =400mA tp =30s VCL =300V IB(on) =800mA VBE(off) =-5V (see figure 12) IC = 3A
ts tf VF
Note (1) Pulsed duration = 300 s, duty cycle 1.5%
4/11
BULB49DT4
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Derating current
Figure 3.
Output characteristics
Figure 4.
Collector-emitter saturation voltage
Figure 5.
Base-emitter saturation voltage
Figure 6.
DC current gain
5/11
Electrical characteristics Figure 7. DC current gain Figure 8.
BULB49DT4 Inductive load storage time
Figure 9.
Inductive load fall time
Figure 10. Reverse biased safe operating area
6/11
BULB49DT4
Electrical characteristics
2.2
Test circuits
Figure 11. Resistive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor
Figure 12. Inductive load switching test circuit
1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier
7/11
Package mechanical data
BULB49DT4
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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BULB49DT4
Package mechanical data
TO-263 (D2PAK) MECHANICAL DATA
DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0o 4.88 15.00 1.27 1.40 2.40 0.40 8o 0o 10.00 8.50 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.016 8o mm MIN. 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 8.00 10.40 0.393 0.334 0.208 0.624 0.055 0.068 0.126 TYP. MAX. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 0.409 inch TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368
- Weight : 1.38 g (typ.) - The planaty of the slug must be within 30 m
P011P6/G
9/11
Revision history
BULB49DT4
4
Revision history
Table 4.
Date 10-Sep-2003 21-Jul-2006
Revision history
Revision 1 2 First release. New template Changes
10/11
BULB49DT4
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